METHOD FOR MANUFACTURING MEMORY DEVICE USING SEMICONDUCTOR ELEMENT

WIPO Patent Application WO/2024/089809

A1

The present invention comprises: a step of forming a first memory cell by forming, from bottom to top, a first N+layer 2a, a first P-layer 3, a first gate insulating layer 5, a first gate conductor layer 6, a second gate conductor layer 8, and a second N+layer 2b on a first P-layer substrate 1, and forming a second conductor layer 11 connected to a second N+layer 2b and extending horizontally, a first material layer 12 on the first conductor layer 11, and a second material layer 13 on the second N+layer 2b; a step of forming a second memory cell having the same structure as the first memory cell on a second P-layer substrate 1a; and forming a two-stage memory cell by aligning the positions of the first material layer 12 and the third material layer 12a, aligning the positions of the second material layer 13 and the fourth material layer 13a, and attaching the first memory cell and the second memory cell to each other. One or both of the first and third material layers 12 and 12a and the second and fourth material layers 13 and 13a can be oxide material layers.

JP2024001641	Semiconductor device and its manufacturing method
JP2023175738	SEMICONDUCTOR DEVICE
JP7256246	semiconductor equipment

HARADA NOZOMU (JP)
SAKUI KOJI (JP)

PCT/JP2022/039959

May 02, 2024

October 26, 2022

Click for automatic bibliography generation  

UNISANTIS ELECT SINGAPORE PTE (SG)
HARADA NOZOMU (JP)
SAKUI KOJI (JP)

H10B12/00

WO2022137607A1	2022-06-30
WO2014184933A1	2014-11-20

JP2018152419A	2018-09-27
JP2008172164A	2008-07-24
JP2003188279A	2003-07-04
JP2008147514A	2008-06-26
US20200135863A1	2020-04-30

TANAKA Shinichiro et al. (JP)

View/Download PDF      PDF Help

Previous Patent: AXIAL FLOW FAN, AIR BLOWER, AND AIR CONDITIONER

Next Patent: MOVING BODY CONTROL SYSTEM, CONTROL METHOD FOR SAME, PROGRAM, AND MOVING BODY