METHOD OF SELECTIVE ETCHING AND SILICON SINGLE CRYSTAL SUBSTRATE

Title:

METHOD OF SELECTIVE ETCHING AND SILICON SINGLE CRYSTAL SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2006/080264

Kind Code:

A1

Abstract:

A method of selective etching, characterized in that a silicon single crystal substrate of < 10 m&ohm ⋅ cm electric resistivity is etched with the use of a selective etchant containing at least, in terms of volume composition, 0.02 to 0.1 of hydrofluoric acid, 0.5 to 0.6 of nitric acid, 0.2 to 0.25 of acetic acid and water at a rate greater than 0.1 µm/min so as to manifest BMD on the surface of the silicon single crystal substrate. Thus, there can be provided a method of selective etching, in which the characteristics of crystal defects, in particular, BMD of ultralow resistivity silicon single crystal substrate of < 10 m&ohm ⋅ cm electric resistivity whose easy detection has been infeasible can be assessed and utilized through the selective etching using a chromium-free etchant wherein no harmful chromium is contained.

More Like This:

JP2706184	[Title of Invention] Movable Stage Device
JP6995648	Measurement inspection equipment

Inventors:

KUME FUMITAKA (JP)

Application Number:

PCT/JP2006/300928

Publication Date:

August 03, 2006

Filing Date:

January 23, 2006

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SHINETSU HANDOTAI KK (JP)
KUME FUMITAKA (JP)

International Classes:

H01L21/66; C30B29/06; C30B33/10; H01L21/306

Foreign References:

JPS5994828A	1984-05-31
JPH07263429A	1995-10-13
JP2004235350A	2004-08-19
JPH04209532A	1992-07-30
JPH11238773A	1999-08-31
JPH05226203A	1993-09-03
JP2004083346A	2004-03-18
JP2002299345A	2002-10-11
JP2005285987A	2005-10-13

Other References: