Title:
METHOD FOR THERMAL TREATMENT OF THE SURFACE LAYER OF A SEMICONDUCTOR BY MEANS OF A PULSED LASER
Document Type and Number:
WIPO Patent Application WO2003019637
Kind Code:
A3
Abstract:
The invention relates to a method for heat treating a surface layer (4) on a semiconductor substrate (5). Laser pulses (2), generated by a laser (1), are delivered to the surface layer (4). Said method permits, in particular, ohmic contacts to III-V compound semiconductors to be produced.
Inventors:
BAUR JOHANNES (DE)
BRUEDERL GEORG (DE)
LELL ALFRED (DE)
NEU WALTER (DE)
OBERSCHMID RAIMUND (DE)
BRUEDERL GEORG (DE)
LELL ALFRED (DE)
NEU WALTER (DE)
OBERSCHMID RAIMUND (DE)
Application Number:
PCT/DE2002/002981
Publication Date:
October 02, 2003
Filing Date:
August 14, 2002
Export Citation:
Assignee:
OSRAM OPTO SEMICONDUCTORS GMBH (DE)
BAUR JOHANNES (DE)
BRUEDERL GEORG (DE)
LELL ALFRED (DE)
NEU WALTER (DE)
OBERSCHMID RAIMUND (DE)
BAUR JOHANNES (DE)
BRUEDERL GEORG (DE)
LELL ALFRED (DE)
NEU WALTER (DE)
OBERSCHMID RAIMUND (DE)
International Classes:
H01L21/28; H01L21/268; H01L21/324; (IPC1-7): H01L21/324; B23K26/00; H01L21/225; H01L21/268; H01L29/45; H01L33/00
Foreign References:
| EP0678945A1 | 1995-10-25 | |||
| DE19534153A1 | 1997-03-27 | |||
| EP0723303A2 | 1996-07-24 |
Other References:
RICHTER H W ET AL: "LASER-INDUCED CHEMICAL REACTIONS AT THE AL/III-V COMPOUND SEMICONDUCTOR INTERFACE", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 60, no. 6, September 1986 (1986-09-01), pages 1994 - 2002, XP000819982, ISSN: 0021-8979
ANDERSON W T ET AL: "LASER ANNEALED TA/GE AND NI/GE OHMIC CONTACTS TO GAAS", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, vol. 2, no. 5, May 1981 (1981-05-01), pages 115 - 117, XP000818924, ISSN: 0741-3106
KOICHI TOYODA: "HIGH-POWER LASER PROCESSING FOR MICROELECTRONICS DEVICES", OPTOELECTRONICS DEVICES AND TECHNOLOGIES, MITA PRESS, TOKYO, JP, vol. 8, no. 2, 1 June 1993 (1993-06-01), pages 131 - 145, XP000383874, ISSN: 0912-5434
HEULIN B ET AL: "THE PROPERTIES OF LASER-ALLOYED ZINC LAYERS ON GAAS", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 105, no. 3, July 1983 (1983-07-01), pages 227 - 235, XP000837479, ISSN: 0040-6090
ANDERSON W T ET AL: "LASER ANNEALED TA/GE AND NI/GE OHMIC CONTACTS TO GAAS", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, vol. 2, no. 5, May 1981 (1981-05-01), pages 115 - 117, XP000818924, ISSN: 0741-3106
KOICHI TOYODA: "HIGH-POWER LASER PROCESSING FOR MICROELECTRONICS DEVICES", OPTOELECTRONICS DEVICES AND TECHNOLOGIES, MITA PRESS, TOKYO, JP, vol. 8, no. 2, 1 June 1993 (1993-06-01), pages 131 - 145, XP000383874, ISSN: 0912-5434
HEULIN B ET AL: "THE PROPERTIES OF LASER-ALLOYED ZINC LAYERS ON GAAS", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 105, no. 3, July 1983 (1983-07-01), pages 227 - 235, XP000837479, ISSN: 0040-6090
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