Title:
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, PRODUCTION METHOD FOR SAME, AND CHARGE STORAGE FILM
Document Type and Number:
WIPO Patent Application WO/2012/014992
Kind Code:
A1
Abstract:
Disclosed is a non-volatile semiconductor device comprising: a tunnel insulating film (12) on top of a semiconductor substrate; a charge storage film (13) on top of the tunnel insulating film; a blocking insulating film (14) on top of the charge storage film; a control gate electrode (15) on top of the blocking insulating film; and source/drain regions (16, 17) formed on the semiconductor substrate on both sides of the control gate electrode. The film is formed in this order and the charge storage film is a silicon nitride film produced using a catalytic chemical vapor deposition method, with a ratio for the constituent elements N and Si (N/Si) of 1.2-1.4.
Inventors:
ZAMA HIDEAKI (JP)
TAKAGI MAKIKO (JP)
KOBAYASHI KIYOTERU (JP)
WATANABE HIROAKI (JP)
TAKAHARA YU (JP)
TAKAGI MAKIKO (JP)
KOBAYASHI KIYOTERU (JP)
WATANABE HIROAKI (JP)
TAKAHARA YU (JP)
Application Number:
PCT/JP2011/067309
Publication Date:
February 02, 2012
Filing Date:
July 28, 2011
Export Citation:
Assignee:
UNIV TOKAI EDUCATIONAL SYSTEM (JP)
ULVAC INC (JP)
ZAMA HIDEAKI (JP)
TAKAGI MAKIKO (JP)
KOBAYASHI KIYOTERU (JP)
WATANABE HIROAKI (JP)
TAKAHARA YU (JP)
ULVAC INC (JP)
ZAMA HIDEAKI (JP)
TAKAGI MAKIKO (JP)
KOBAYASHI KIYOTERU (JP)
WATANABE HIROAKI (JP)
TAKAHARA YU (JP)
International Classes:
H01L21/8247; C23C16/42; H01L21/318; H01L27/115; H01L29/788; H01L29/792
Foreign References:
| JP2007194511A | 2007-08-02 | |||
| JP2010067993A | 2010-03-25 | |||
| JP2006269673A | 2006-10-05 |
Attorney, Agent or Firm:
KURIHARA, Hiroyuki et al. (JP)
Hiroyuki Kurihara (JP)
Hiroyuki Kurihara (JP)
Download PDF:
Claims: