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Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2024/024450
Kind Code:
A1
Abstract:
A semiconductor device (100) comprises: a first substrate (2) having a first electrode (6); a second substrate (3) having a second electrode (8) disposed facing the first electrode; and an oxide layer (7) that is disposed between the first electrode and the second electrode and that is provided to at least one of the first electrode and the second electrode. The capacitance of the capacitor can be increased without preventing refinement.

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Inventors:
MIURA TSUKASA (JP)
Application Number:
PCT/JP2023/025222
Publication Date:
February 01, 2024
Filing Date:
July 07, 2023
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/00; H01L21/02; H01L21/304; H01L21/3205; H01L21/768; H01L21/822; H01L23/522; H01L27/04; H01L27/146; H04N25/70
Domestic Patent References:
WO2020235234A12020-11-26
WO2022075190A12022-04-14
Foreign References:
JP2013080838A2013-05-02
JP2014187166A2014-10-02
JP2016181531A2016-10-13
JP2018073851A2018-05-10
US20160020235A12016-01-21
US20180342544A12018-11-29
US20190123088A12019-04-25
Attorney, Agent or Firm:
MIYAJIMA Manabu (JP)
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