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Title:
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2012/035684
Kind Code:
A1
Abstract:
The present invention provides a first MIS transistor and a second MIS transistor of the same conductivity type disposed on top of the same semiconductor substrate (50). The thickness of an interface layer (2A) for a gate insulating film (52a) in the first MIS transistor is greater than the thickness of an interface layer (2b) for a gate insulating film (52b) in the second MIS transistor.

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Inventors:
ITO SATORU
MORIYAMA YOSHIYA
OHKAWA HIROSHI
AKAMATSU SUSUMU
Application Number:
PCT/JP2011/002868
Publication Date:
March 22, 2012
Filing Date:
May 24, 2011
Export Citation:
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Assignee:
PANASONIC CORP (JP)
ITO SATORU
MORIYAMA YOSHIYA
OHKAWA HIROSHI
AKAMATSU SUSUMU
International Classes:
H01L21/8238; H01L21/8234; H01L27/088; H01L27/092; H01L29/423; H01L29/49
Foreign References:
JP2003100896A2003-04-04
JP2004079606A2004-03-11
JP2004140197A2004-05-13
JPH08306797A1996-11-22
JP2004534401A2004-11-11
JPH08255881A1996-10-01
JP2010161308A2010-07-22
JP2010157641A2010-07-15
JP2005536053A2005-11-24
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)
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Claims:



 
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