SEMICONDUCTOR DEVICE, USE THEREOF, AND MANUFACTURING METHOD THEREOF

Title:

SEMICONDUCTOR DEVICE, USE THEREOF, AND MANUFACTURING METHOD THEREOF

Document Type and Number:

WIPO Patent Application WO/2023/233910

Kind Code:

A1

Abstract:

The present invention addresses the problem of providing a semiconductor device which has a trench or fin structure using a β-Ga2O3 semiconductor suitable for microfabrication and yields satisfactory device characteristics due to little processing damage and suppressed interfacial energy levels on crystal surfaces or bonding interfaces.　The present invention provides a semiconductor device having a semiconductor layer composed of β-Ga2O3 crystal, wherein the semiconductor layer has a three-dimensional structure of linear protrusions or grooves on a first main surface, the side surface of the three-dimensional structure being the (100) facet plane.

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Inventors:

OSHIMA TAKAYOSHI (JP)
OSHIMA YUICHI (JP)

Application Number:

PCT/JP2023/017094

Publication Date:

December 07, 2023

Filing Date:

May 01, 2023

Export Citation:

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Assignee:

NAT INST MATERIALS SCIENCE (JP)

International Classes:

H01L29/872; C23C16/04; C23C16/40; C30B25/04; C30B25/20; C30B29/16; H01L21/329; H01L21/336; H01L21/36; H01L21/365; H01L29/06; H01L29/12; H01L29/24; H01L29/47; H01L29/78

Domestic Patent References:

WO2014097931A1

2014-06-26

Foreign References:

CN112331553A	2021-02-05
JP2016031953A	2016-03-07
US20210013314A1	2021-01-14

Other References:

HOSEIN ET AL.: "Evolution of the faceting, morphology and aspect ratio of gallium oxide nanowires grown by vapor-solid deposition", J. OF CRYSTAL GROWTH, vol. 396, 29 March 2014 (2014-03-29), pages 24 - 32, XP028651883, DOI: http://dx.doi.org/10.1016/j.jcrysgro. 2014.03.03 7
BERMUDEZ: "The structure of low-index surfaces of (3-Ga203", CHEMICAL PHYSICS, vol. 323, 18 October 2005 (2005-10-18), pages 193 - 203, XP025050786, DOI: 10.1016/j.chemphys. 2005.08.05 1

Attorney, Agent or Firm:

ASAMURA IP P.C. (JP)

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