Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/124800
Kind Code:
A1
Abstract:
A silicon carbide semiconductor device according to the present invention comprises a silicon carbide substrate which has a first main surface and a second main surface that is on the reverse side of the first main surface. The first main surface is provided with a gate trench which is defined by a lateral surface that penetrates through the source region and the body region to the drift region, and a bottom surface that is continuous with the lateral surface, and which extends in a first direction that is parallel to the first main surface. The silicon carbide substrate additionally has: an electric field attenuated region which is provided between the bottom surface and the second main surface and extends in the first direction, while having the second conductivity type; and a connection region which electrically connects a contact region and the electric field attenuated region to each other, while having the second conductivity type. When viewed in plan from a direction that is perpendicular to the first main surface, the gate trench and the electric field attenuated region are on a virtual straight line that extends in the first direction, and the connection region is in contact with the electric field attenuated region on the virtual straight line.
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Inventors:
SAITOH YU (JP)
MASUDA TAKEYOSHI (JP)
MASUDA TAKEYOSHI (JP)
Application Number:
PCT/JP2020/043436
Publication Date:
June 24, 2021
Filing Date:
November 20, 2020
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/265; H01L21/28; H01L29/12; H01L29/41; H01L29/417; H01L29/423; H01L29/49; H01L29/78
Domestic Patent References:
| WO2017179377A1 | 2017-10-19 |
Foreign References:
| JP2013214661A | 2013-10-17 | |||
| JP2013258369A | 2013-12-26 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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