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Title:
プラズマを用いてエッチングボディにパターンをエッチングする方法
Document Type and Number:
Japanese Patent JP2005504439
Kind Code:
A
Abstract:
The invention relates to a method for etching structures in an etching body (19), especially recesses in a silicon body which are laterally and precisely defined by an etching mask, by means of a plasma (15). According to said method, a high-frequency pulsed, low-frequency modulated high frequency power is injected into the etching body (19), at least temporarily, by means of a high-frequency alternating voltage, and the intensity of the plasma (15) is modulated as a function of time.

Inventors:
Franz Realmer
Application Number:
JP2003531510A
Publication Date:
February 10, 2005
Filing Date:
June 28, 2002
Export Citation:
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Assignee:
ROBERT BOSCH GMBH
International Classes:
H05H1/46; H01J37/32; H01L21/02; H01L21/3065; H01L21/3213; (IPC1-7): H01L21/3065; H01L21/02; H05H1/46
Domestic Patent References:
JPH09263948A1997-10-07
JPH0883776A1996-03-26
JPH02174229A1990-07-05
Foreign References:
WO2001039261A12001-05-31
Attorney, Agent or Firm:
Toshio Yano
Einzel Felix-Reinhard
Reinhard Einsel