【発明の名称】半導体光機能素子

Title:

【発明の名称】半導体光機能素子

Document Type and Number:

Japanese Patent JP3071630

Kind Code:

B2

Abstract:

An optical functional semiconductor element which performs ultrafast, high-contrast logic operation through utilization of the high speed of light velocity. A resonant-tunneling diode having a negative resistance characteristic is provided apart from a light absorbing layer formed by one of i-type layers of what is called a triangular barrier diode of an nipin or pinip structure, by which as the quantity of incident light increases, the quantity of transmitted current is switched from increase to decrease, the amount of change is made high-contrast and an ultrafast logic operation can be performed.

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Inventors:

Haruhisa Sakata
Katsuyuki Udaka
Yuichi Matsushima

Application Number:

JP7787094A

Publication Date:

July 31, 2000

Filing Date:

March 25, 1994

Export Citation:

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Assignee:

KDD Co., Ltd.

International Classes:

G02F3/02; G02F1/017; H01L27/15; H01L29/205; H01L29/68; H01L29/88; H01S5/00; H01S5/026; H01S5/50; G02F1/015; H01S5/40; (IPC1-7): G02F3/02; H01L27/15; H01L29/205; H01L29/68; H01L29/88; H01S5/50

Domestic Patent References:

JP545692A

Attorney, Agent or Firm:

Manabu Otsuka

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