Title:
酸化膜の原子層堆積方法
Document Type and Number:
Japanese Patent JP4293359
Kind Code:
B2
Abstract:
An atomic layer deposition method to deposit a oxide thin film is provided. The method employs a nitrate ligand in a first hafnium precursor as an oxidizer for a second hafnium precursor to form the hafnium oxide. Using a hafnium nitrate precursor and a hafnium chloride precursor, the method is well suited for the deposition of a high k hafnium oxide dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.
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Inventors:
John F. Conley, Junior
Yoshino
Rajendra Solanky
Yoshino
Rajendra Solanky
Application Number:
JP2004043728A
Publication Date:
July 08, 2009
Filing Date:
February 19, 2004
Export Citation:
Assignee:
Sharp Corporation
International Classes:
C23C16/40; C23C16/02; C23C16/34; C23C16/52; C30B25/02; C30B25/14; H01L21/205
Other References:
J. F. Conley, Jr. et al. ,Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate,Electrochem. Solid-State Lett. ,米国,The Electrochemical Society, Inc. ,2002年 5月,Vol. 5, No. 5,pp. C57-C59
J. F. Conley, Jr. et al. ,Atomic layer deposition of thin hafnium oxide films using a carbon free precursor,J. Appl. Phys. ,米国,American Institute of Physics,2003年 1月 1日,Vol. 93, No. 1,pp. 712-718
J. F. Conley, Jr. et al. ,Atomic layer deposition of thin hafnium oxide films using a carbon free precursor,J. Appl. Phys. ,米国,American Institute of Physics,2003年 1月 1日,Vol. 93, No. 1,pp. 712-718
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaaki Yasumura
Takeshi Oshio