Title:
可変抵抗素子
Document Type and Number:
Japanese Patent JP4655019
Kind Code:
B2
Abstract:
To provide a novel variable resistive element applicable to a resistance change type memory.
This variable resistive element 10 includes a first electrode 12, a resistor layer 14 formed on the first electrode 12, and a second electrode 16 formed on the resistor layer 14. The resistor layer 14 is made of a transition metal oxide represented by Y
COPYRIGHT: (C)2008,JPO&INPIT
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Inventors:
Hiroshi Miyazawa
Application Number:
JP2006272496A
Publication Date:
March 23, 2011
Filing Date:
October 04, 2006
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01L27/105; H01L45/00
Domestic Patent References:
| JP2004363604A | ||||
| JP2009517864A |
Attorney, Agent or Firm:
Yukio Fuse
Mitsue Obuchi
Mitsue Obuchi