MAGNETIC MEMORY DEVICE

Title:

MAGNETIC MEMORY DEVICE

Document Type and Number:

WIPO Patent Application WO/2004/064149

Kind Code:

A1

Abstract:

A magnetic memory device having MRAM elements the operations of which are ensured without any influence of a strong external magnetic field on the internal leakage magnetic field. The MRAM elements (30) magnetically shielded by magnetic shield layers (33, 34) are disposed in intermediate regions (41), avoiding the end regions (43) and the central region (42) of the magnetic shield layers (33, 34). The magnetic shield effect is nullified in the end regions (43), and the internal leakage magnetic field strength is great in the central regions (42). Therefore in the intermediate regions (41) the MRAM elements (30) are not influenced by the internal leakage magnetic field and normally operate.

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Inventors:

KATO YOSHIHIRO (JP)
OKAYAMA KATSUMI (JP)
KOBAYASHI KAORU (JP)
YAMAMOTO TETSUYA (JP)
IKARASHI MINORU (JP)

Application Number:

PCT/JP2003/016341

Publication Date:

July 29, 2004

Filing Date:

December 19, 2003

Export Citation:

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Assignee:

SONY CORP (JP)
KATO YOSHIHIRO (JP)
OKAYAMA KATSUMI (JP)
KOBAYASHI KAORU (JP)
YAMAMOTO TETSUYA (JP)
IKARASHI MINORU (JP)

International Classes:

H01L21/8246; H01L23/552; H01L27/105; H01L23/00; H01L27/22; H01L43/08; (IPC1-7): H01L23/00; H01L27/10; H01L43/08

Domestic Patent References:

WO2003034496A1

2003-04-24

Foreign References:

JP2003297983A	2003-10-17
JP2003115578A	2003-04-18
US5902690A	1999-05-11
US5939772A	1999-08-17
JP2001250206A	2001-09-14
DE10103314A1	2002-08-14

Other References: