MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

Japanese Patent JP2004146614

A

To provide a magnetoresistance effect element which can effectively reduce a coercive force Hc and its fluctuation, and can obtain a superior asteroid curve, and to provide a magnetic memory device MRAM including the magnetoresistance effect element as a memory device.

This magnetoresistance effect element is composed based on a found fact that the fluctuation of the coercive force Hc considerably depends on the shape of the magnetoresistance effect element or a memory element. Namely, in the magnetoresistance effect element, at least a pair of ferromagntic layers 5, 7 are laminated by interposing an inner layer 6 so as to be opposed to each other, and by conducting a current in the direction perpendicular to laminated faces, a change of magnetoresistance can be obtained. Since the thickness of the peripheral part of the information recording layer or ferromagntic layer 7 is thinner than the thickness of the central part, the pinning effect of magnetization by the peripheral part can be reduced.

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HOSOMI MASAKATSU
OBA KAZUHIRO
HIGO YUTAKA
BESSHO KAZUHIRO
MIZUGUCHI TETSUYA
YAMAMOTO TETSUYA
ENDO KEITARO
KUBO SHINYA
SONE TAKESHI
NARISAWA KOSUKE
KANO HIROSHI

JP2002310203A

May 20, 2004

October 24, 2002

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SONY CORP

G11C11/15; H01F10/16; H01L21/8246; H01L27/105; H01L43/08; (IPC1-7): H01L43/08; G11C11/15; H01F10/16; H01L27/105

Yoshitsuno Kakuda
Hironobu Isoyama

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