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Title:
プローブチップ構造の製造方法
Document Type and Number:
Japanese Patent JP4733319
Kind Code:
B2
Abstract:
A full metal probe and a method of making the metal probe for electrical atomic force microscopy. In one embodiment, the method comprises manufacturing the full metal probe using two lithography steps. The step of etching thin membranes is dropped or eliminated to substantially reduce the processing time. Thus, topside processing is sufficient. The probe and tip can be peeled off from the wafer using a metallization procedure.

Inventors:
Thomas Hanchel
Wilfried van der Forst
Application Number:
JP2001263479A
Publication Date:
July 27, 2011
Filing Date:
August 31, 2001
Export Citation:
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Assignee:
IMEC
International Classes:
G01Q60/38; G01Q60/10; G01Q60/16; G01Q60/24; G01Q70/14; G01Q70/16
Other References:
T. Hantschel, P. Niedermann, T. Trenkler, and W. Vandervorst,Highly conductive diamond probes for scanning spreading resistance microscopy,Appl. Phys. Lett,2000年 3月20日,Volume 76 , Number 12,pp.1603-1605
Attorney, Agent or Firm:
Takuji Yamada
Mitsuo Tanaka
Mitsuo Wada
Aoyama Aoi



 
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