Title:
パワーモジュール
Document Type and Number:
Japanese Patent JP5863599
Kind Code:
B2
Abstract:
A power module includes an IGBT; a MOSFET connected in parallel with the IGBT; a lead frame having a first frame portion on which the IGBT is mounted and a second frame portion on which the MOSFET is mounted, and having a step by which the first frame portion is located at a first height and the second frame portion is located at a second height larger than the first height; and an insulation sheet for a heat sink which is disposed on an underside of only the first frame portion of the lead frame.
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| JP2012064855 | SEMICONDUCTOR DEVICE |
Inventors:
Takuya Shiraishi
Tomonori Tanaka
Tomonori Tanaka
Application Number:
JP2012181982A
Publication Date:
February 16, 2016
Filing Date:
August 21, 2012
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L23/48; H01L25/07; H01L25/18; H02M1/08
Domestic Patent References:
| JP2009295959A | ||||
| JP4354156A | ||||
| JP2003188318A | ||||
| JP2005019782A | ||||
| JP2012059885A | ||||
| JP2001156253A | ||||
| JP2002199699A |
Foreign References:
| US20090289691 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita