To provide a crystal growth apparatus for growing a group III nitride crystal, which maintains a nearly constant mixing ratio of an alkali metal to a III group metal.
A crucible 10 holds a mixed melt 290 of Na metal and Ga metal. A reaction vessel 20 covers the surrounding of the crucible 10. Piping 30 is connected with the reaction vessel 20 at the lower side of the crucible 10. A melt holding member 60 is fixed in the piping 30 below the connecting part of the crucible 10 and the reaction vessel 20 to hold the metal melt 190 (Na metal melt) in the piping 30 by the surface tension of the metal melt 190. A steel gas cylinder 140 supplies a nitrogen gas to the piping 30 through a pressure regulator 130. A supporting device 50 brings a seed crystal 5 into contact with the mixed melt 290. During the crystal growth of GaN crystal from the seed crystal 5, the vapor pressure of an Na metal which evaporates from the metal melt 190 is controlled to be generally equal to the vapor pressure of an Na metal which evaporates from the mixed melt 290.
COPYRIGHT: (C)2008,JPO&INPIT
SARAYAMA SHOJI
FUSE AKIHIRO
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