To rapidly and accurately inspect, for example, an electro-optical device of a liquid-crystal device, or the like.
A TFT for composing a differential amplification circuit 15 has a single-crystal silicon layer, thus speedily processing first and second potential signals and rapidly outputting high-potential and low-potential signals as compared with a TFT having, for example, a high-temperature polysilicon layer as a channel layer. Additionally, when using high-temperature polysilicon as a semiconductor layer for composing the TFT, the area of the channel layer needs to be expanded to obtain high carrier mobility. However, the mobility of carriers in the channel layer of the TFT can be speeded up without expanding the area of the channel layer by using the single-crystal silicon layer, thus executing the inspection of a pixel circuit speedily and accurately without increasing the size of a liquid crystal panel 100.
| JP3695307 | WIRING BOARD, DISPLAY, SEMICONDUCTOR CHIP AND ELECTRONIC APPARATUS |
| JPH0283575 | PANEL SUPPORT STRUCTURE |
| JPH09127529 | LIQUID CRYSTAL DISPLAY DEVICE |
NAKAYAMA KAZUYA
Fujitsuna Hideyoshi
Osamu Suzawa
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