Title:
ETCHING METHOD FOR GALLIUM ARSENIDE LAYER AND MANUFACTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2000156364
Kind Code:
A
Abstract:
To provide an etching method for a GaAs layer with good selectivity, and a manufacturing method for a semiconductor element with an accurately controlled recess depth.
When a GaAs layer 14 in a laminated structure body 10 made up of the GaAs layer 14 and the other layer 18 is selectively etched by using an etching solution containing citric acid, hydrogen peroxide, and water, an InxAl1-x As layer in contact with the GaAs layer 14 is put between the GaAs layer 14 and the other layer 18.
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Inventors:
OSHIMA TOMOYUKI
Application Number:
JP32897798A
Publication Date:
June 06, 2000
Filing Date:
November 19, 1998
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/306; H01L21/308; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L21/306; H01L21/308; H01L21/338; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Takashi Ogaki