Title:
FIELD EFFECT SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH05206174
Kind Code:
A
Abstract:
PURPOSE: To solve problems such as a leak current of a gate electrode, variation of a threshold value and corrosion of a semiconductor substrate due to entering of chemicals by improving coverage of a gate electrode.
CONSTITUTION: A layer 10 formed of a compound of tungsten and silicon is formed in a lowermost layer of a gate electrode by sputtering, and a tungsten layer 11 is formed thereon by thermal CVD method; thereby, the layer 10 is formed with good coverage and the tungsten layer 11 formed thereon is formed to blanket shape with good coverage.
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Inventors:
NUNOKAWA MITSUJI
Application Number:
JP1468892A
Publication Date:
August 13, 1993
Filing Date:
January 30, 1992
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/872; H01L21/338; H01L29/47; H01L29/778; H01L29/812; (IPC1-7): H01L21/338; H01L29/48; H01L29/812
Attorney, Agent or Firm:
Shoji Kashiwaya (1 person outside)