Title:
FIN-TYPE DEVICE SYSTEM AND METHOD
Document Type and Number:
Japanese Patent JP2015053510
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a fin type device system and a production method.SOLUTION: A method of producing a transistor includes forming a gate 208 within a substrate 212 having a surface, and forming a buried oxide (BOX) layer 210 within the substrate and adjacent to the gate 208 at a first BOX layer face. The method also includes forming a raised source-drain channel (fin) 202, where at least a portion of the fin 202 extends from the surface of the substrate 212, and where the fin 202 has a first fin face 214 adjacent to a second BOX layer face of the BOX layer 210.
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Inventors:
SONG SEUNG-CHUL
MOHAMED HASSAN ABU-RAHMA
HAN BEOM-MO
MOHAMED HASSAN ABU-RAHMA
HAN BEOM-MO
Application Number:
JP2014226855A
Publication Date:
March 19, 2015
Filing Date:
November 07, 2014
Export Citation:
Assignee:
QUALCOMM INC
International Classes:
H01L21/8242; H01L27/10; H01L27/108; H01L29/786
Domestic Patent References:
| JPH10162589A | 1998-06-19 | |||
| JPH08204191A | 1996-08-09 | |||
| JP2007018588A | 2007-01-25 | |||
| JP2006504267A | 2006-02-02 | |||
| JPH10162589A | 1998-06-19 | |||
| JPH08204191A | 1996-08-09 |
Foreign References:
| US20090108351A1 | 2009-04-30 | |||
| US20070008013A1 | 2007-01-11 | |||
| US20090108351A1 | 2009-04-30 | |||
| US20070008013A1 | 2007-01-11 |
Attorney, Agent or Firm:
Yasuhiko Murayama
Shinpei Kuroda
Shinpei Kuroda