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Title:
GROUP III NITRIDE EPITAXIAL LAYER ON SILICON CARBIDE SUBSTRATE
Document Type and Number:
Japanese Patent JP2012142629
Kind Code:
A
Abstract:

To provide a group III nitride epitaxial layer on a silicon carbide substrate.

A semiconductor structure comprises: a silicon carbide wafer having a diameter of at least 100 mm; and a group III nitride heterostructure on the wafer, and exhibits high uniformity in many characteristics. These components comprise: a standard deviation of sheet resistivity lower than 3% on the entire wafer surface; a standard deviation of electron mobility lower than 1% on the entire wafer surface; a standard deviation of carrier density lower than 3.3% on the entire wafer surface; and a standard deviation of conductivity of about 2.5% on the entire wafer surface.


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Inventors:
SAXLER ADAM W
EDWARD LLOYD HUTCHINS
Application Number:
JP2012100913A
Publication Date:
July 26, 2012
Filing Date:
April 26, 2012
Export Citation:
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Assignee:
CREE INC
International Classes:
C30B29/38; H01L21/205; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
JP2003086520A2003-03-20
JP2004200188A2004-07-15
JP2002359255A2002-12-13
JP2000082671A2000-03-21
JP2002334843A2002-11-22
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Natsuki Morishita



 
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