PURPOSE: To form a high-frequency integrated circuit having high performance by forming a capacitance element having MIM structure as an active element and a resistance element through ion implantation onto a semi-insulating GaAs substrate and using a mutually wired semiconductor chip.
CONSTITUTION: An integrated circuit chip 11 composed of a MESFET element 12, a resistance element 13 and a capacitance element 14 formed by a metallic film/an insulating film/the metallic film is shaped onto a semi-insulating GaAs substrate by using ion implantation. A ceramic board 15, on which metalic wirings and a spiral coil element 16 are formed by employing a printing technique and which mainly comprises alumina, is formed. The integrated circuit chip 11 is fixed onto the ceramic board 15 by using silver paste, etc. The electrode terminals of the semiconductor chip 11 and the electrode terminals of the ceramic board 15 are connected by employing gold wires 17. The ceramic board is loaded on a package 17, and bonding pads 18 are connected by gold wires 19 and protected by a resin. An integrated circuit, in which a spiral coil having high Q and the elements having high performance are unified, can be shaped.
| WO/2007/029445 | CAPACITOR-EQUIPPED SEMICONDUCTOR DEVICE |
| JP3600133 | MANUFACTURING METHOD OF CIRCUIT DEVICE |
| JP2004047811 | SEMICONDUCTOR DEVICE WITH BUILT-IN PASSIVE ELEMENT |
MORI MITSUHIRO
HASE HIDEKAZU
SHIMIZU TOSHIHIKO
