PURPOSE: To enable uniform setting of the gap length of the thin-film magnetic head using a magneto-resistance effect element (MR element) by making the film thickness of the layer formed on the MR element uniform and preventing the degradation in the electric withstand voltage.
CONSTITUTION: The MR element 12 having a three-layered structure is formed on a lower gap layer 11. An insulating layer 21a on the MR element 12 and an insulating layer 21b on the lower gap layer 11 are simultaneously formed and electrode layers 13, 13 of the same film thickness as the film thickness of the insulating layers 21 a, 21b are formed from the upper surface at both ends of the MR element 12 to the front surface of the lower gap layer 11. The track width Tw is determined by the transverse size of the insulating layer 21 a. The film thickness of these layers are made uniform if an upper insulating material layer 22 and a shielding layer 4 are formed thereon. Since the film thickness of the upper insulating layer material layer 22 is uniform, the degradation in the withstand voltage is prevented and the setting of the gap length G1 at a uniform value is possible.
| JP2751696 | PROBLEM TO BE SOLVED: To manufacture a thin film magnetic head. |
| JP3842509 | THIN FILM MAGNETIC HEAD |
| WO/2010/016329 | THERMALLY-ASSISTED MAGNETIC RECORDING HEAD |
YABE YASUHIRO
HONDA KENJI
