PURPOSE: To improve the uniformity and smoothness of plating when a plating layer is applied to the surface to be plated of a semiconductor wafer by a jet plating equipment by employing a construction wherein the jet is applied downward.
CONSTITUTION: A jet is applied to a wafer 1 downward from the above and, further, a mesh-form anode 4 is also positioned above the wafer 1. Then, even if foams exist in electrolyte supplied to an electrolyte inlet 7 or foams are produced when the electrolyte passes through the mesh-form anode 4, the foams hardly reaches the surface 1a to be plated of the wafer 1. Even if the surface 1a to be plated adsorbs the foams, they are removed easily by the continuing jet. With this constitution, the uniformity and smoothness of the plating can be improved.
JP2989440 | METHOD FOR CHROMIUM PLATING |
JPH02221400 | SUCTION CUP FOR SURFACE ELECTROLYTE TREATMENT |
IKEDA KANICHIRO