Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5313364
Kind Code:
A
Abstract:
PURPOSE:To make it possible to use a heat-oxidized film, which is often used for a planar semiconductor device, even in a mesa type.

More Like This:
JP4594988Restoration of hydrophobicity of low K and ultra low K organic silicate films used as intermetallic dielectrics
JP2679683FABRICATION OF SEMICONDUCTOR DEVICE
JP2001217415METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Inventors:
OOURA JIYUNICHI
KOBAYASHI TORAKICHI
Application Number:
JP8719076A
Publication Date:
February 06, 1978
Filing Date:
July 23, 1976
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/316; H01L21/22; H01L21/31; H01L21/329; (IPC1-7): H01L21/22; H01L21/31; H01L29/91



 
Previous Patent: JPS5313363

Next Patent: JPS5313365