Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS54152480
Kind Code:
A
Abstract:
PURPOSE:To form an electrode easily by converting the only desired part of Al wiring into an oxide through anode oxidation with the process divided into two low- tension and high-tension stages. CONSTITUTION:Butadiene-based resist mask 29 which is well adhesive to Al is formed by processing Al film 27 formed on a semiconductor-element surface in N2 of 200 deg.C for about sixty minutes and baked. Exposed Al is anode-oxidized by a voltage of 7V to form Al2O3 thin film 28 of approximately 0.3mu. The adhesion of the mask never lowers because of such this low voltage. Next, the adhesion is improved by baking and anode oxidation is carried out by a voltage of 22V to convert Al film 27 under it into Al2O3 30 until its bottom. As a result, no breakaway occurs to mask 29. Next, mask 29 is removed, and Al 27 is removed by using new mask 31, which is also removed afterward. Consequently, the precision of the pattern will not lower and processing efficiency and yield will improve.
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Inventors:
MOCHIZUKI AKIRA
Application Number:
JP6149278A
Publication Date:
November 30, 1979
Filing Date:
May 22, 1978
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/3205; H01L21/28; H01L21/302; H01L21/3063; H01L29/40; (IPC1-7): H01L21/302; H01L21/88; H01L29/40