Title:
MANUFACTURING METHOD FOR MATERIAL COMPLEX
Document Type and Number:
Japanese Patent JP3886959
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a material complex, especially, a different kind or a non-different kind material complex like SOI material which requires a short processing time, reduces damage and breakage of the material, is simply conducted, obtains a high-quality isolation surface as for the method which is provided with a step to form a prescribed isolation area on a source substrate of a first material, a step to connect the source substrate to a handle substrate of a second material and form a source-handle complex, and a step to anneal-heat-treat the source substrate to weaken the source substrate in the isolation area.
SOLUTION: The annealing includes a first annealing step to the source-handle complex which can be stopped prior to the isolation of the heat-treated source substrate and a second annealing step to the source-handle complex after the first step which is conducted at a lower temperature than that of the first step.
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Inventors:
Cecile, Boerne
Bruno, Siren
Christel, Ragahe
Cyborg, morris
Bruno, Siren
Christel, Ragahe
Cyborg, morris
Application Number:
JP2003412293A
Publication Date:
February 28, 2007
Filing Date:
December 10, 2003
Export Citation:
Assignee:
SAI Tech Silicon on Insulator Technologies S.A.
Comisaria Talenergy Atomic
Comisaria Talenergy Atomic
International Classes:
H01L21/02; H01L21/324; H01L27/12; (IPC1-7): H01L27/12; H01L21/324
Domestic Patent References:
| JP2000036583A |
Foreign References:
| US5877070 | ||||
| WO2001093325A1 |
Attorney, Agent or Firm:
Yuichi Yamada
Yasuhito Suzuki
Katsuyuki Ninomiya
Yasuhito Suzuki
Katsuyuki Ninomiya