Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SiN FILM
Document Type and Number:
Japanese Patent JP2013153164
Kind Code:
A
Abstract:

To provide methods of making silicon nitride (SiN) on substrates.

Chlorine (Cl)-free conformal SiN films are prepared by deposition. The SiN films are not only Cl-free but carbon (C)-free. Another aspect relates to methods of tuning the stress and/or the wet etch rate of the conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.


More Like This:
WO2002003454METHOD FOR ETCHING DUAL DAMASCENE STRUCTURES IN ORGANOSILICATE GLASS
JP2003023006METHOD AND EQUIPMENT FOR FORMING INSULATION FILM, AND SEMICONDUCTOR DEVICE
JPS61290726FORMATION OF INSULATION FILM AND APPARATUS THEREFOR
Inventors:
DENNIS HAUSMANN
JON HENRI
BART VAN SCHRAVENDIJK
EASWAR SRINIVASAN
Application Number:
JP2013007612A
Publication Date:
August 08, 2013
Filing Date:
January 18, 2013
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NOVELLUS SYSTEMS INC
International Classes:
H01L21/318; C23C16/42; C23C16/505
Domestic Patent References:
JP2006060091A2006-03-02
JP2005210076A2005-08-04
JP2010283388A2010-12-16
JP2014532304A2014-12-04
JP2008517479A2008-05-22
Foreign References:
US20110256734A12011-10-20
US20110086516A12011-04-14
US20050158983A12005-07-21
US20060084283A12006-04-20
US20080260969A12008-10-23
Attorney, Agent or Firm:
Meisei International Patent Office
Kenichi Hori



 
Previous Patent: SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME

Next Patent: COMPLEX STRUCTURE HAVING MAGNETOCALORICALLY ACTIVE MATERIAL AND PRODUCTION METHOD THEREOF