METHOD FOR ETCHING DUAL DAMASCENE STRUCTURES IN ORGANOSILICATE GLASS

WIPO Patent Application WO2002003454

B1

Method for forming dual damascene etch structures in wafers, and semiconductor devices formed according to the method. The present invention utilizes the two-step etch process to form dual damascene structures in organosilicate dielectric layers. According to one embodiment of the present invention, a first etch step is undertaken utilizing a first, low selectivity etchant, which etches completely through the trench dielectric (8) and almost completely through the via dielectric (12), leaving a small remainder of the via dielectric over the barrier layer protecting metalized objects protected by the barrier layer (14). After the first etch step, a second etch step is performed utilizing a second, highly selective etchant. This second etch step is conducted with little damage to the barrier layer. An alternative embodiment of the present invention contemplates a "trench-first" etch strategy.

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FLANNER JANET M (US)
MOREY IAN (SG)

PCT/US2001/018626

June 27, 2002

June 08, 2001

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LAM RES CORP (US)
FLANNER JANET M (US)
MOREY IAN (SG)

H01L21/311; H01L21/316; H01L21/3065; H01L21/768; H01L21/318; (IPC1-7): H01L21/768; H01L21/311

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