METHOD FOR ULTRAMICRO MACHINING

Japanese Patent JPH10274700

A

To carry out ultramicro machining whose typical dimension is the order of nm on an insulator substrate such as glass, crystal and diamond.

First, an ultramicro pattern film whose typical dimension is between 1 and 500 nm is made on an object to be machined 21. Then, a high- speed atomic beam with beam energy of 5 keV or lower is generated by a high-speed atomic beam source 32 by setting the ratio of the length of an atomic beam emission hole in the source 32 to the diameter of the hole at 5 or more and using a fluoric gas. Thereafter, the object 21 coated with the pattern film is put in a vacuum container 33, where the pressure is set at between 1×10-4 Torr and 5× 10-3 Torr, and is irradiated with the high-speed atomic beam to transfer ultramicro patterns 25 whose typical dimensions are between 1 and 500 nm to the object 21.

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TAIMA YASUSHI
HATAKEYAMA MASAKI
ICHIKI KATSUNORI

JP9457997A

October 13, 1998

March 28, 1997

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EBARA CORP

G21K5/04; H01L21/302; H01L21/461; H05H3/02; (IPC1-7): G21K5/04; H01L21/302; H01L21/461; H05H3/02

Isamu Watanabe (2 outside)

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