CRYSTALLIZATION OF ALUMINUM WIRING INTO SINGLE CRYSTAL

Title:

CRYSTALLIZATION OF ALUMINUM WIRING INTO SINGLE CRYSTAL

Document Type and Number:

Japanese Patent JPH0750299

Kind Code:

A

Abstract:

PURPOSE: To provide a crystallizing method for the aluminum wiring of a semiconductor device into a single crystal so as to provide a crystallized aluminum layer into a single crystal in a wide range of area.

CONSTITUTION: A crystallizing method for an aluminum wiring into a single crystal is composed of the following processes; a) a process of forming an insulating layer 14 on a substrate 10 and forming a groove 18 on the insulating layer 14, b) a process of forming aluminum wiring layers 28 and 30 on the insulating layer 14 provided with the groove 18, and c) a process of heating the aluminum wiring layers under the condition that prescribed temperature gradient is formed on the substrate and the aluminum layer 30 which constitutes the aluminum wiring layer is crystallized into a single crystal so as to form the aluminum wiring.

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Inventors:

SUGANO YUKIYASU

Application Number:

JP21358793A

Publication Date:

February 21, 1995

Filing Date:

August 06, 1993

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L23/52; H01L21/26; H01L21/3205; (IPC1-7): H01L21/3205; H01L21/26

Attorney, Agent or Firm:

Takahisa Yamamoto

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