PURPOSE: To form a pattern having the slant surface on the side wall with good dimensional stability and a desired film thickness by using a resist layer whose lower part is narrower than the upper part, films to be etched and thin films whose etching properties are different.
CONSTITUTION: A first thin film 13 is formed on a substrate 11. A second thin film 14 having the different etching property is formed on the film 13. A resist layer 15 whose lower part is narrower than the upper part is formed on the film 14. The second film 14 and the first thin film 13 are sequentially etched so that their widths are equal to the width of the upper part of the resist layer 15. Thereafter, the width of the second thin film pattern 14a is narrowed to the width of the lower part of the resist layer 15. Thereafter, the first thin film pattern 13a is etched under the etching conditions wherein the rate of the isotropic component is made large, with the narrowed second thin film pattern 14a as a mask. In this way, the reduction in amount of the remaining film of the film pattern to be etched and the deterioration in edge shape of the upper part of the pattern are prevented. Thus, the stable pattern characterized by good dimensional controllability at the specified film thickness can be formed.
| JP3799819 | SURFACE TREATMENT AND APPARATUS THEREFOR |
| JPH06188222 | MICROWAVE PLASMA ETCHING DEVICE |
KAWAZU YOSHIYUKI
JINBO HIDEYUKI
TO YOICHI
| JPS63124417A | 1988-05-27 | |||
| JPS6081830A | 1985-05-09 |