PATTERN FORMING METHOD

Japanese Patent JP3415799

B2

PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light having a wavelength in the range of 1-180 nm as light for exposure.
SOLUTION: A resist material with a base resin having a sulfonic ester in a side chain is applied on a semiconductor substrate 10 to form a resist film 11. This resist film 11 is patternwise exposed by irradiation with F2 excimer laser light 13 having 157 nm wavelength through a mask 12 and the patternwise exposed resist film 11 is developed with a developing solution to form the objective resist pattern 14.

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Shinji Kishimura
Akiko Katsuyama
Sasako wins

JP2000036178A

June 09, 2003

February 15, 2000

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Matsushita Electric Industrial Co., Ltd

H01L21/027; G03F7/027; G03F7/039; G03F7/20; (IPC1-7): G03F7/039; H01L21/027

JP9189998A
JP10111563A
JP425847A
JP10282672A
JP1130852A
JP10282644A
JP8254820A
JP6194840A
JP488348A
JP4134347A
JP7134416A
JP5265214A
JP2245756A
JP6045241A
JP2000231194A
JP8506908A

Hiroshi Maeda

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