Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018049679
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a drive circuit of a display device, which is composed of one conductivity type TFT and which can normally obtain an amplitude of an output signal.SOLUTION: In TFTs 101, 104, when pulses are input and the TFTs are turned on and potential of a node α rises and subsequently reaches VDD-VthN (threshold value of an N type TFT), the TFTs 101, 104 are put into a floating state and a TFT 105 is turned on and potential of an output node rises with the increase of a clock signal to Hi. On the other hand, potential of a gate electrode of the TFT 105 further rises with the potential rise of the output node due to the operation of a capacitance 107 to reach higher potential than VDD+VthN. Accordingly, potential of the output node rises to VDD without causing voltage drop by the threshold value of the TFT 105. Subsequently, outputs in the next stage are input to TFTs 102, 103 and the TFTs 102, 103 are turned on, and potential of the node α drops and the TFT 105 is turned off. At the same time, a TFT 106 is turned on and potential of an output node becomes Lo.SELECTED DRAWING: Figure 1
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Inventors:
ASAMI MUNEHIRO
NAGAO SHO
TANADA YOSHIFUMI
NAGAO SHO
TANADA YOSHIFUMI
Application Number:
JP2017193928A
Publication Date:
March 29, 2018
Filing Date:
October 04, 2017
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G11C19/28; G09G3/20; G09G3/36; H03K17/06; H03K19/0175; H03K19/094
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