Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5558559
Kind Code:
A
Abstract:
PURPOSE: To reduce the voltage variation of a base, by forming a capacity between an electrode and a package electrode under a semiconductor element base.
CONSTITUTION: A capacity is formed between electrode 6 of semiconductor element 1 and flat electrode 7 of package 2 via dielectric 8. When electrode 7 is connected to an external power source, a capacity is inserted between base and power source. As a result, the voltage variation of the vase is absorbed, and the voltage variation is minimized.
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Inventors:
TANAKA TADASHI
Application Number:
JP13201478A
Publication Date:
May 01, 1980
Filing Date:
October 25, 1978
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/822; H01L27/02; H01L27/04; H01L27/10; (IPC1-7): H01L27/02