PURPOSE: To restrain influence of impurities from a glass substrate and to prevent a film formed on the glass substrate from peeling off by forming the film of at least a film of silicon compound containing nitrogen and a film of silicon compound containing oxygen.
CONSTITUTION: A film formed of an SiNxOy layer 2 and an SiN2 layer 3 is formed on a glass substrate 1 one by one. Otherwise, a film 12 is formed on the glass substrate 1 and composition of the film 12 is SiNxOy and a value of y changes from 2 to 0 from a boundary part with the glass substrate to above. Since silicon compound containing oxygen is formed at the side of the substrate in this way, adhesion with an insulating substrate is good. Furthermore, since silicon compound containing nitrogen is formed together with silicon compound containing oxygen, impurity ion in the glass substrate can be prevented from difusing into a semiconductor element. Moreover, in the manufacturing method, a film can successively be formed inside the same film formation device; therefore, a good insulator can effectively be formed.
YAOI YOSHIFUMI
MORITA TATSUO
TSUCHIMOTO SHUHEI
