SEMICONDUCTOR LIGHT EMITTING DEVICE

Japanese Patent JP2005203519

A

To provide a semiconductor light emitting device which can effectively dissipate the heat generated in the semiconductor light emitting element.

The semiconductor light emitting device 1 is provided with a light emitting diode 3 and a heatsink 21. The light emitting diode 3 and the heatsink 21 are joined with a conductive bonding layer 13 such as solder. The conductive joining layer 13 is provided on a region surrounded by a peripheral region on the surface of an anode electrode 9 opposing to the main surface 21a of the heatsink 21. Moreover, the conductive joining layer 13 is formed so that the contact area with an anode electrode 9 becomes 60% or more but 98% or less of the surface area of the anode electrode 9 opposing to the main surface 21a of the heatsink 21. In addition, a cathode electrode 11 is arranged in the region to which the conductive joining layer 13 is reflected on the rear surface 5b of the substrate 5.

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HIROSE YOSHIYUKI
SAITO HIROHISA
NAGAI YOICHI
KITABAYASHI HIROYUKI
IKEDA AYAKO

JP2004007321A

July 28, 2005

January 14, 2004

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SUMITOMO ELECTRIC INDUSTRIES

H01L33/06; H01L33/32; H01L33/40; H01L33/56; H01L33/58; H01L33/62; (IPC1-7): H01L33/00

JPH07273133A	1995-10-20
JPH06163607A	1994-06-10
JP2001244503A	2001-09-07
JP2001358371A	2001-12-26
JPH11317546A	1999-11-16
JP2004015013A	2004-01-15

WO2003010833A2

2003-02-06

Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Masatoshi Shibata

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