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Title:
SPUTTERING METHOD AND SPUTTERING DEVICE
Document Type and Number:
Japanese Patent JP3807684
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To improve the utilizing efficiency and long term stability of targets, in a method of generating sputter plasma in section spaces other than the opening parts formed by primary and secondary targets and forming thin coating, by specifying the generating process.
SOLUTION: A magnet unit 120 and a target 110 are arranged as shown in the fig., and the opening edge parts of the section spaces of the secondary targets 110-3 to 5 are provided with electron reflecting means. In this way, the circular-arcuate enclosed magnetic lines of force FD221 and 221 of annular- planar magnetron modes along all peripheries of the outer edge parts of prime targets 110-1 and 2, the circular-arcuate enclosed magnetic lines of force FD215, 225 or the like of wire-shaped planar magnetron modes along the surfaces of both side edge parts of the secondary targets 110-3 to 5 and the distributions FD11 and 12 of the magnetic lines of force of the opposite modes between the primary targets 110-1 and 2 are formed. The distribution FD12 of the magnetic lines of force simultaneously forms the distribution of the magnetic lines of force of coaxial magnetron type modes in the vicinity of the front faces of the secondary targets 110-3 to 5, respectively.


Inventors:
Sadao Kadokura
Masahiko Naoe
Application Number:
JP16267696A
Publication Date:
August 09, 2006
Filing Date:
June 24, 1996
Export Citation:
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Assignee:
Sadao Kadokura
International Classes:
C23C14/34; C23C14/35; (IPC1-7): C23C14/34; C23C14/35
Domestic Patent References:
JP62014633B1
JP4011624B2
JP1262610A
JP7316806A
JP63114985A
JP4002771A
JP58105474U
JP9104975A
JP7011431A
Attorney, Agent or Firm:
Yusuke Omi