THIN FILM TRANSISTOR

Japanese Patent JPS6435960

A

PURPOSE: To prevent the current leakage between the metal electrode wiring and the source, drain and active layer by providing the inter-layer insulating film with a double-layer structure of a SiO2 film or phosphorus-silicate glass film formed by a cold low pressure CVD method and a SiO2 film formed by a hot low pressure CVD method.

CONSTITUTION: An active layer 5 forming the channel of a thin film transistor is composed of amorphous silicon, particularly a hydrogenated amorphous silicon thin film or a polysilicon thin film, and the inter-layer insulating film provided between the thin film transistor and a metal electrode wiring 8 is comprised of a double-layer structure of a SiO2 film or phosphorus-silicate glass film 9 formed by a low pressure CVD method at a low temperature, preferably, at 380∼500°C and a SiO2 film 10 formed by a low pressure CVD method at a high temperature, preferably, at 700∼900°C. With this, the element plane is made flat, so the breaking of the metal electrode wiring at a step and the current leakage between the metal electrode wiring and the source or drain can be prevented.

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SANO YUTAKA
IKEGUCHI HIROSHI
TERAO NORIYUKI

JP19102287A

February 07, 1989

July 30, 1987

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RICOH KK
RICOH GEN ELECTRON RES INST

H01L29/78; H01L21/31; H01L21/316; H01L27/12; H01L29/786; (IPC1-7): H01L21/316; H01L21/95; H01L27/12; H01L29/78

Morio Sada

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