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Title:
ALKYLSILANE LAMINATE, METHOD FOR PRODUCING THE SAME, AND THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2010/137664
Kind Code:
A1
Abstract:
Provided is an alkylsilane laminate with which it is possible to obtain an organic semiconductor film having excellent semiconductor properties. Such a laminate can be useful for an organic thin-film transistor. The alkylsilane laminate comprises an underlayer (Sub) having hydroxyl groups at the surface and an alkylsilane thin film (AS) formed on this underlayer. The alkylsilane laminate is a laminate wherein the critical surface energy Ec of the alkylsilane thin film and the number of carbons (X) of the alkylsilane satisfies the following formula (1): Ec ≦ 29.00‐0.63x (mN / m) (1) Also provided is a thin-film transistor (10) having such an alkylsilane laminate (Sub, AS).

Inventors:
KUSHIDA TAKASHI (JP)
NAITO HIROYOSHI (JP)
Application Number:
PCT/JP2010/059032
Publication Date:
December 02, 2010
Filing Date:
May 27, 2010
Export Citation:
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Assignee:
TEIJIN LTD (JP)
KUSHIDA TAKASHI (JP)
NAITO HIROYOSHI (JP)
International Classes:
H01L29/786; H01L21/336; H01L51/05; H01L51/30; H01L51/40
Foreign References:
JP2008192724A2008-08-21
JP2002517718A2002-06-18
JP2007512680A2007-05-17
JP2008529807A2008-08-07
JP2008171978A2008-07-24
JP2007129227A2007-05-24
JP2005079560A2005-03-24
JP2009059751A2009-03-19
Other References:
H. SIRRINGHAUS ET AL., NATURE, vol. 40, 1999, pages 4509 - 4521
A. SALLEO ET AL., APPLIED PHYSICS LETTERS, vol. 81, no. 23, 2002, pages 4383 - 4385
Y.Y. LIN ET AL., IEEE TRANS ELECTRON DEVICES, vol. 44, 1997, pages 1325 - 1331
S. ONCLIN ET AL., ANGEWANDTE CHEMIE INTERNATIONAL EDITION, vol. 44, 2005, pages 6282 - 6304
Y. WANG ET AL., LANGMUIR, vol. 19, 2003, pages 1159 - 1167
N.L. JEON ET AL., LANGMUIR, vol. 13, 1997, pages 3382 - 3391
See also references of EP 2437305A4
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
Aoki 篤 (JP)
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