PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/1998/049724

Kind Code:

A1

Abstract:

A process for manufacturing a semiconductor device in which halogen atoms present on and in the surface of a silicon layer are partially removed to a concentration of 100 ppm or less and electrodes are formed on the resultant silicon layer, so that low-resistance electrodes can be formed and hence a highly reliable semiconductor device can be obtained.

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Inventors:

KATAOKA KOTARO (JP)
IWATA HIROSHI (JP)
NAKANO MASAYUKI (JP)

Application Number:

PCT/JP1998/001892

Publication Date:

November 05, 1998

Filing Date:

April 23, 1998

Export Citation:

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Assignee:

SHARP KK (JP)
KATAOKA KOTARO (JP)
IWATA HIROSHI (JP)
NAKANO MASAYUKI (JP)

International Classes:

H01L21/28; H01L21/285; H01L21/306; H01L21/3205; H01L21/336; H01L21/60; H01L23/52; H01L29/45; H01L29/78; (IPC1-7): H01L21/336; H01L21/28; H01L29/78

Foreign References:

JPH08115890A	1996-05-07
JPS61258434A	1986-11-15
JPH08250463A	1996-09-27

Other References: