Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/157754
Kind Code:
A1
Abstract:
In the present invention, a 1-port SRAM cell is provided with: a load transistor (PU1); a load transistor (PU2); a drive transistor (PD1); a drive transistor (PD2); an access transistor (PG1) of which one node is connected to an embedded wire (15) and a wire (75); and an access transistor (PG2) of which one node is connected to an embedded wire (14) and a wire (74). The embedded wires (14, 15) are formed so as to extend in a Y-direction in an embedded wire layer. The wires (74, 75) are formed so as to extend in the Y-direction in a first wire layer that is a layer over the embedded wire layer.
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| JPS5957473 | SEMICONDUCTOR MEMORY |
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Inventors:
HIROSE MASANOBU (JP)
Application Number:
PCT/JP2023/004369
Publication Date:
August 24, 2023
Filing Date:
February 09, 2023
Export Citation:
Assignee:
SOCIONEXT INC (JP)
International Classes:
G11C11/412; H10B10/00; H01L21/82; H01L21/8234; H01L21/8238; H01L27/088; H01L27/092
Domestic Patent References:
| WO2020255801A1 | 2020-12-24 | |||
| WO2019155559A1 | 2019-08-15 | |||
| WO2021153169A1 | 2021-08-05 |
Foreign References:
| JP2019525484A | 2019-09-05 |
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
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