Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/021154
Kind Code:
A1
Abstract:
Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: an active pillar, the active pillar comprising a channel region, and a first doped region and a second doped region which are located on two sides of the channel region, wherein the channel region, the first doped region and the second doped region have the same doping type; an inversely doped region provided in the channel region, the inversely doped region being close to the first doped region, wherein the doping type in the inversely doped region is different from that in the channel region; and a gate, wherein the gate surrounds part of the channel region and is located on a plane where the axis of the active pillar is located, and the projection of the gate partially overlaps the projection of the inversely doped region.
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Inventors:
TANG YI (CN)
XIAO JIANFENG (CN)
XIAO JIANFENG (CN)
Application Number:
PCT/CN2022/110982
Publication Date:
February 01, 2024
Filing Date:
August 08, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/94; H01L21/768; H01L29/78
Foreign References:
| US5581100A | 1996-12-03 | |||
| US20100276662A1 | 2010-11-04 | |||
| CN114759030A | 2022-07-15 | |||
| CN113644061A | 2021-11-12 | |||
| CN114078779A | 2022-02-22 | |||
| CN114420644A | 2022-04-29 | |||
| CN114709168A | 2022-07-05 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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