Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/134029
Kind Code:
A1
Abstract:
The present disclosure relates to a semiconductor structure and a preparation method therefor. The method comprises: providing a substrate, wherein a first trench is formed in the substrate; forming a first dielectric layer and a protective material layer in the first trench, wherein the first dielectric layer is located between the protective material layer and the substrate, and the upper surface of the first dielectric layer is lower than the upper surface of the substrate, so as to expose part of a side wall of the first trench; forming a second dielectric layer on the exposed side wall of the first trench, wherein a second trench is formed between the second dielectric layer and the protective material layer, and the second dielectric layer is in contact with the first dielectric layer; and filling the second trench to form a work function structure, wherein the work function structure comprises a first work function layer and a second work function layer, the second work function layer is located on the upper surface of the first work function layer, and the work function of the second work function layer is smaller than the work function of the first work function layer. The leakage current of the semiconductor structure is reduced without changing resistance, thereby improving the electrical stability and performance of the semiconductor structure.
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Inventors:
JANG SEMYEONG (CN)
MOON JOONSUK (CN)
XIAO DEYUAN (CN)
CHIN JO-LAN (CN)
MOON JOONSUK (CN)
XIAO DEYUAN (CN)
CHIN JO-LAN (CN)
Application Number:
PCT/CN2022/084782
Publication Date:
July 20, 2023
Filing Date:
April 01, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108; H01L21/8242
Foreign References:
| CN110931487A | 2020-03-27 | |||
| CN104009082A | 2014-08-27 | |||
| CN106328647A | 2017-01-11 | |||
| CN108987282A | 2018-12-11 | |||
| CN107527912A | 2017-12-29 | |||
| CN108807389A | 2018-11-13 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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