Title:
SILICON SUBSTRATE ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2010/016330
Kind Code:
A1
Abstract:
Provided is a silicon substrate etching method by which high dimensional accuracy of a leading end diameter of protruding sections is obtained and the protruding sections are uniformly formed. A plurality of protruding sections (52) each of which having a base section (53) and an leading end section (54) are formed on a silicon substrate (K), by sequentially performing the following steps; a first step of forming a mask pattern having a hole for forming the leading end section (54), on a resist film (60) formed on a surface of the silicon substrate (K); a second step of forming a groove (61) by anisotropically etching the surface of the silicon substrate (K); a third step of forming a mask pattern having a hole for forming the base section (53), on a resist film (62) formed on the surface of the silicon substrate (K); a fourth step of isotropically etching the surface of the silicon substrate (K) until the resist (62), which is at the groove bottom section and embedded in the groove (61), is exposed; a fifth step of forming the base section (53) by anisotropically etching the surface of the silicon substrate (K); and a sixth step of removing the resist film (62) on the silicon substrate (K).
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Inventors:
NOZAWA YOSHIYUKI (JP)
YAMAMOTO TAKASHI (JP)
YAMAMOTO TAKASHI (JP)
Application Number:
PCT/JP2009/060574
Publication Date:
February 11, 2010
Filing Date:
June 10, 2009
Export Citation:
Assignee:
SUMITOMO PRECISION PROD CO (JP)
NOZAWA YOSHIYUKI (JP)
YAMAMOTO TAKASHI (JP)
NOZAWA YOSHIYUKI (JP)
YAMAMOTO TAKASHI (JP)
International Classes:
B81C1/00; A61M37/00; H01L21/3065
Foreign References:
| JP3696513B2 | 2005-09-21 | |||
| JP2005199392A | 2005-07-28 | |||
| JPH10221128A | 1998-08-21 |
Attorney, Agent or Firm:
MURAKAMI, SATOSHI (JP)
Tomoji Murakami (JP)
Tomoji Murakami (JP)
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