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Title:
半導体層の成長方法および半導体発光素子の製造方法
Document Type and Number:
Japanese Patent JP4462289
Kind Code:
B2
Abstract:
Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.

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Inventors:
Ohmae Akatsuki
Yumochi
Jugo Otomo
Noriyuki Kazedagawa
Satoshi Hino
Application Number:
JP2007133340A
Publication Date:
May 12, 2010
Filing Date:
May 18, 2007
Export Citation:
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Assignee:
ソニー株式会社
International Classes:
H01L21/205; H01L33/30; H01L33/32
Foreign References:
WO2006099138A1
Attorney, Agent or Firm:
Koichi Mori



 
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