To provide a manufacturing method of semiconductor modules capable of heightening detection sensitivity of cracks in insulating substrates even if the method is simple and applicable to mass-produced products and preventing creepage breakdown of insulating substrates.
A semiconductor module 1 is heated by a hot plate 4 and impressed with a negative DC voltage by a high-voltage power source 2. Temperature at heating is set at a temperature higher than a room temperature and preferably set at 125°C or higher. Since it is possible to detect a crack 20 present in an insulating substrate 12 by a voltage lower than an AC voltage of conventional use, it is possible to prevent creepage breakdown which may occur in the insulating substrate 12. It is further possible to lower an impressing voltage by setting a heating temperature higher than a room temperature.
COPYRIGHT: (C)2006,JPO&NCIPI
Hiroshi Nishihori
Tadahiko Inaba
Kanako Murakami
Nakatsuru Kazutaka