Title:
４５０ｍｍウエハ用スパッタリングターゲット−バッキングプレート接合体及びスパッタリングターゲット−バッキングプレート接合体の製造方法
Document Type and Number:
Japanese Patent JP6288620
Kind Code:
B2
Abstract:
Provided is a sputtering target-backing plate assembly for a 450-mm wafer, wherein the amount of warpage of the target developed during sputtering is 4 mm or less. Further provided is a method of manufacturing a sputtering target-backing plate assembly for a 450-mm wafer, the method comprising bonding a sputtering target material selected from copper, titanium, tantalum, nickel, cobalt, tungsten or alloys thereof with a backing plate made of copper, a copper alloy, an aluminum alloy, titanium or a titanium alloy at a temperature of 200 to 600°C, thereby the amount of warpage of the target developed during sputtering being 4 mm or less. An object of the present invention is to attempt to suppress detachment of a target from a backing plate and development of a crack by controlling development of warpage which occurs in a large sputtering target and to achieve uniform deposition properties.
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Inventors:
Suzuki Ryo
Takeo Okabe
Takeo Okabe
Application Number:
JP2014523707A
Publication Date:
March 07, 2018
Filing Date:
June 28, 2013
Export Citation:
Assignee:
JX Nippon Mining & Metals Co., Ltd.
International Classes:
C23C14/34; H01L21/285
Domestic Patent References:
| JP111766A | ||||
| JP6108246A | ||||
| JP2001295040A | ||||
| JP790564A |
Attorney, Agent or Firm:
Ikki Kogoshi
Isamu Ogoshi
Isamu Ogoshi
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