CHEMICALLY AMPLIFIED RESIST MATERIAL AND METHOD FOR FORMING RESIST PATTERN

Japanese Patent JP2018025739

A

PROBLEM TO BE SOLVED: To provide a chemically amplified resist material that can exhibit excellent lithographic performance while maintaining good sensitivity.SOLUTION: The chemically amplified resist material of the present invention comprises (1) a polymer component that can be converted into soluble or insoluble with a developer by an action of an acid and (2) a component that generates a radiation-sensitive sensitizer and an acid by exposure. The (2) component comprises (a) a predetermined component, any two components in (a) to (c) components, or all of (a) to (c) components, in which the (a) component or the (c) component contains a radiation-sensitive first compound and a radiation-sensitive second compound. The first compound contains a first onium cation and a first anion; the second compound contains a second onium cation and a second anion different from the first anion; and when the first onium cation and the second onium cation are reduced into radicals, energy released by each onium cation is less than 5.0 eV.SELECTED DRAWING: None

JP3989149	Chemical amplification negative resist composition for electron beam or X-ray
JP2003215803	IR SENSITIVE PHOTOSENSITIVE COMPOSITION
JP4932527	Polyorganosiloxane composition

NAKAGAWA YASUSHI
NARUOKA TAKEHIKO
NAGAI TOMOKI

JP2016217575A

February 15, 2018

November 07, 2016

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JSR CORP

G03F7/004; C08F212/14; C08F220/18; G03F7/039; G03F7/20; G03F7/38

JP2017040916A	2017-02-23
JP2017040833A	2017-02-23

Hajime Amano
Fujimoto Katsune
Yoshinori Ikeda
Hiroshi Ogawa
Koji Ishida
Kenichi Fujinaka

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